- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
3 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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견적을 받아 |
422
재고
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IXYS | MOSFET >1200V High Voltage Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1500 V | 12 A | 2 Ohms | 4.5 V | 106 nC | Enhancement | |||
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견적을 받아 |
1,168
재고
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ROHM Semiconductor | MOSFET N-Ch MOSFET 1200V Silicon Carbide SiC | Through Hole | TO-247-3 | Tube | 1 Channel | SiC | N-Channel | 1200 V | 40 A | 80 mOhms | 4 V | 106 nC | ||||||
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견적을 받아 |
416
재고
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ROHM Semiconductor | MOSFET SiC N-Ch MOSFET w/ SBD 1200V | Through Hole | TO-247-3 | Tube | 1 Channel | SiC | N-Channel | 1200 V | 40 A | 80 mOhms | 4 V | 106 nC |
