- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- 선택한 필터 :
7 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
389
재고
|
Infineon Technologies | MOSFET N-Ch 600V 7.7A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 252 mOhms | 3.5 V | 25.5 nC | Enhancement | CoolMOS | ||
|
|
견적을 받아 |
240
재고
|
Infineon Technologies | MOSFET N-Ch 600V 13.8A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 252 mOhms | 3.5 V | 25.5 nC | Enhancement | CoolMOS | ||
|
|
견적을 받아 |
500
재고
|
Infineon Technologies | MOSFET N-Ch 600V 13.8A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 252 mOhms | 3.5 V | 25.5 nC | Enhancement | CoolMOS | ||
|
|
|
견적을 받아 |
228
재고
|
Infineon Technologies | MOSFET N-Ch 600V 13.8A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 252 mOhms | 3.5 V | 25.5 nC | Enhancement | CoolMOS | ||
|
|
|
견적을 받아 |
500
재고
|
Infineon Technologies | MOSFET N-Ch 600V 7.7A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 252 mOhms | 3.5 V | 25.5 nC | Enhancement | CoolMOS | ||
|
|
|
견적을 받아 |
60
재고
|
Infineon Technologies | MOSFET N-Ch 600V 13.8A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 252 mOhms | 3.5 V | 25.5 nC | Enhancement | CoolMOS | ||
|
|
견적을 받아 |
6,000
재고
|
Vishay / Siliconix | MOSFET N-Channel 30V PowerPAK SO-8 | + 20 V, - 16 V | SMD/SMT | PowerPAK-SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 45.5 A | 0.0054 Ohms | 1.1 V | 25.5 nC | Enhancement |
