- Package / Case :
4 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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견적을 받아 |
389
재고
|
Infineon Technologies | MOSFET N-Ch 600V 7.7A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 252 mOhms | 3.5 V | 25.5 nC | Enhancement | CoolMOS | |||
|
견적을 받아 |
500
재고
|
Infineon Technologies | MOSFET N-Ch 600V 13.8A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 252 mOhms | 3.5 V | 25.5 nC | Enhancement | CoolMOS | |||
|
견적을 받아 |
500
재고
|
Infineon Technologies | MOSFET N-Ch 600V 7.7A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 252 mOhms | 3.5 V | 25.5 nC | Enhancement | CoolMOS | |||
|
견적을 받아 |
60
재고
|
Infineon Technologies | MOSFET N-Ch 600V 13.8A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 252 mOhms | 3.5 V | 25.5 nC | Enhancement | CoolMOS |