- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Tradename :
5 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
견적을 받아 |
6,247
재고
|
Fairchild Semiconductor | MOSFET SO8 DUAL NCH LOGIC level POWER TRENCH | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 5.5 A | 38 mOhms | Enhancement | PowerTrench | |||
|
견적을 받아 |
4,980
재고
|
Fairchild Semiconductor | MOSFET SO-8 DUAL N-CH | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 5.5 A | 20 mOhms | Enhancement | PowerTrench SyncFET | |||
|
견적을 받아 |
3,716
재고
|
Fairchild Semiconductor | MOSFET SO-8 COMP N-P-CH | 8 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 20 V | 5.5 A | 30 mOhms, 55 mOhms | Enhancement | ||||
|
견적을 받아 |
5,101
재고
|
ON Semiconductor | MOSFET 20V 5.5A/-4.2A Complementary | 8 V | SMD/SMT | ChipFET-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 5.5 A | 45 mOhms, 80 mOhms | Enhancement | ||||
|
견적을 받아 |
1,303
재고
|
Fairchild Semiconductor | MOSFET SO-8 DUAL N-CH | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 5.5 A | 40 mOhms | Enhancement | PowerTrench |