- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
3 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
1,521
재고
|
ROHM Semiconductor | MOSFET FET 1200V 5A 450mOhm Silicon Carbide SiC | - 6 V to + 22 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | SiC | N-Channel | 1200 V | 10 A | 450 mOhms | 1.6 V to 4 V | 27 nC | |||
|
|
견적을 받아 |
1,245
재고
|
ROHM Semiconductor | MOSFET 1700V 3.7A N-MOSFET Silicon Carbide SiC | - 6 V to + 22 V | Through Hole | TO-3PFM-3 | - 55 C | + 175 C | Tube | 1 Channel | SiC | N-Channel | 1700 V | 3.7 A | 1.5 Ohms | 1.6 V | 14 nC | Enhancement | ||
|
|
|
견적을 받아 |
628
재고
|
ROHM Semiconductor | MOSFET MOSFET1200V14A280m OhmSiliconCarbideSiC | - 6 V to + 22 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | SiC | N-Channel | 1200 V | 14 A | 280 mOhms | 1.6 V to 4 V | 36 nC |
