1 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | |
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견적을 받아 |
1,521
재고
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ROHM Semiconductor | MOSFET FET 1200V 5A 450mOhm Silicon Carbide SiC | - 6 V to + 22 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | SiC | N-Channel | 1200 V | 10 A | 450 mOhms | 1.6 V to 4 V | 27 nC |
