- Vgs - Gate-Source Voltage :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
- 선택한 필터 :
20 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
500
재고
|
Infineon Technologies | MOSFET HIGH POWER NEW | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 23 A | 88 mOhms | 3 V | 34 nC | Enhancement | |||
|
|
|
견적을 받아 |
500
재고
|
Infineon Technologies | MOSFET HIGH POWER NEW | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 17 A | 129 mOhms | 3 V | 23 nC | Enhancement | |||
|
|
|
견적을 받아 |
500
재고
|
Infineon Technologies | MOSFET HIGH POWER NEW | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 20 A | 108 mOhms | 3 V | 27 nC | Enhancement | |||
|
|
견적을 받아 |
1,842
재고
|
Infineon Technologies | MOSFET N-Ch 100V 300A HSOF-8 | 20 V | SMD/SMT | HSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 300 A | 2 mOhms | 2.2 V | 169 nC | Enhancement | |||
|
|
|
견적을 받아 |
2,808
재고
|
Infineon Technologies | MOSFET MV POWER MOS | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 155 A | 5 mOhms | 2 V | 92 nC | Enhancement | OptiMOS | ||
|
|
|
견적을 받아 |
1,880
재고
|
Infineon Technologies | MOSFET MV POWER MOS | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 300 A | 370 mOhms | 700 mV | 336 nC | Enhancement | OptiMOS | ||
|
|
|
견적을 받아 |
1,837
재고
|
Infineon Technologies | MOSFET MV POWER MOS | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 300 A | 1.7 mOhms | 2 V | 207 nC | Enhancement | OptiMOS | ||
|
|
|
견적을 받아 |
1,320
재고
|
Infineon Technologies | MOSFET MV POWER MOS | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 300 A | 1.7 mOhms | 2 V | 207 nC | Enhancement | OptiMOS | ||
|
|
|
견적을 받아 |
1,982
재고
|
Infineon Technologies | MOSFET LV POWER MOS | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 300 A | 370 mOhms | 700 mV | 336 nC | Enhancement | OptiMOS | ||
|
|
|
견적을 받아 |
452
재고
|
Infineon Technologies | MOSFET MV POWER MOS | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 155 A | 5 mOhms | 2 V | 92 nC | Enhancement | OptiMOS | ||
|
|
|
견적을 받아 |
567
재고
|
Infineon Technologies | MOSFET | 30 V | SMD/SMT | HSOF-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 14 A | 424 mOhms | 3 V | 20 nC | Enhancement | CoolMOS | ||
|
|
|
견적을 받아 |
31
재고
|
Infineon Technologies | MOSFET | 30 V | SMD/SMT | HSOF-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 69 A | 33 mOhms | 3 V | 110 nC | Enhancement | CoolMOS | ||
|
|
|
견적을 받아 |
7,984
재고
|
Infineon Technologies | MOSFET N-Ch 80V 300A HSOF-8 | 20 V | SMD/SMT | HSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 300 A | 1.7 mOhms | 2.2 V | 178 nC | Enhancement | |||
|
|
|
견적을 받아 |
10,000
재고
|
Infineon Technologies | MOSFET MV POWER MOS | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 300 A | 660 uOhms | 2.1 V | 287 nC | Enhancement | OptiMOS | ||
|
|
|
견적을 받아 |
3,390
재고
|
Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 300 A | 660 uOhms | 2.1 V | 287 nC | Enhancement | OptiMOS | ||
|
|
|
전망 | Infineon Technologies | MOSFET | 30 V | SMD/SMT | HSOF-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 24 A | 228 mOhms | 3 V | 35 nC | Enhancement | CoolMOS | |||
|
|
|
전망 | Infineon Technologies | MOSFET N-CHANNEL_30/40V | HSOF-8 | Reel | 1 Channel | Si | N-Channel | CoolMOS | |||||||||||||
|
|
|
전망 | Infineon Technologies | MOSFET N-CHANNEL_30/40V | HSOF-8 | Reel | 1 Channel | Si | N-Channel | CoolMOS | |||||||||||||
|
|
|
전망 | Infineon Technologies | MOSFET N-CHANNEL 30/40V | HSOF-8 | Reel | 1 Channel | Si | N-Channel | ||||||||||||||
|
|
|
견적을 받아 |
2,879
재고
|
Infineon Technologies | MOSFET | HSOF-8 | Reel | Si | CoolMOS |
