- Vgs - Gate-Source Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
8 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
1,842
재고
|
Infineon Technologies | MOSFET N-Ch 100V 300A HSOF-8 | 20 V | SMD/SMT | HSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 300 A | 2 mOhms | 2.2 V | 169 nC | Enhancement | |||
|
|
|
견적을 받아 |
2,808
재고
|
Infineon Technologies | MOSFET MV POWER MOS | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 155 A | 5 mOhms | 2 V | 92 nC | Enhancement | OptiMOS | ||
|
|
|
견적을 받아 |
1,837
재고
|
Infineon Technologies | MOSFET MV POWER MOS | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 300 A | 1.7 mOhms | 2 V | 207 nC | Enhancement | OptiMOS | ||
|
|
|
견적을 받아 |
1,320
재고
|
Infineon Technologies | MOSFET MV POWER MOS | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 300 A | 1.7 mOhms | 2 V | 207 nC | Enhancement | OptiMOS | ||
|
|
|
견적을 받아 |
452
재고
|
Infineon Technologies | MOSFET MV POWER MOS | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 155 A | 5 mOhms | 2 V | 92 nC | Enhancement | OptiMOS | ||
|
|
|
견적을 받아 |
7,984
재고
|
Infineon Technologies | MOSFET N-Ch 80V 300A HSOF-8 | 20 V | SMD/SMT | HSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 300 A | 1.7 mOhms | 2.2 V | 178 nC | Enhancement | |||
|
|
|
견적을 받아 |
10,000
재고
|
Infineon Technologies | MOSFET MV POWER MOS | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 300 A | 660 uOhms | 2.1 V | 287 nC | Enhancement | OptiMOS | ||
|
|
|
견적을 받아 |
3,390
재고
|
Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 300 A | 660 uOhms | 2.1 V | 287 nC | Enhancement | OptiMOS |
