- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 34 A (1)
- - 40 A (1)
- - 45 A (1)
- - 60 A (1)
- - 7.5 A (1)
- 10 A (2)
- 100 A (1)
- 13 A (2)
- 130 A (1)
- 134 A (1)
- 15 A (1)
- 150 A (5)
- 16 A (1)
- 160 A (1)
- 18 A (3)
- 20 A (2)
- 24 A (1)
- 26 A (1)
- 28 A (3)
- 280 A (1)
- 32 A (3)
- 33 A (1)
- 34 A (1)
- 35 A (1)
- 38 A (1)
- 40 A (1)
- 42 A (2)
- 44 A (1)
- 45 A (1)
- 47 A (1)
- 48 A (1)
- 5.5 A (1)
- 55 A (1)
- 56 A (1)
- 57 A (1)
- 59 A (1)
- 60 A (2)
- 63 A (1)
- 68 A (1)
- 7.5 A (1)
- 71 A (1)
- 72 A (1)
- 79 A (1)
- 85 A (1)
- 92 A (1)
- 93 A (1)
- Rds On - Drain-Source Resistance :
-
- 1.1 mOhms (1)
- 1.35 mOhms (1)
- 1.4 mOhms (1)
- 1.7 mOhms (1)
- 1.9 mOhms (2)
- 10.1 mOhms (1)
- 10.2 mOhms (1)
- 10.6 mOhms (1)
- 11 mOhms (2)
- 11.2 mOhms (1)
- 11.3 mOhms (1)
- 12.6 mOhms (1)
- 13.1 mOhms (1)
- 14.5 mOhms (1)
- 16 mOhms (1)
- 168 mOhms (1)
- 17 mOhms (1)
- 2.1 mOhms (2)
- 2.2 mOhms (2)
- 2.3 mOhms (1)
- 2.7 mOhms (1)
- 24 mOhms (2)
- 27 mOhms (1)
- 28 mOhms (1)
- 3.2 mOhms (1)
- 3.3 mOhms (1)
- 3.7 mOhms (2)
- 3.8 mOhms (2)
- 30 mOhms (1)
- 4 mOhms (1)
- 4.8 mOhms (1)
- 44 mOhms (1)
- 450 mOhms (1)
- 5.4 mOhms (2)
- 50 mOhms (1)
- 54 mOhms (1)
- 6 mOhms (1)
- 6.1 mOhms (1)
- 6.2 mOhms (1)
- 6.8 mOhms (1)
- 610 uOhms (1)
- 67 mOhms (1)
- 7.1 mOhms (2)
- 7.4 mOhms (1)
- 8 mOhms (1)
- 8.5 mOhms (2)
- 850 uOhms (1)
- 890 mOhms (1)
- 9.8 mOhms (1)
- 95 mOhms (1)
- 96 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 10.6 nC (1)
- 103 nC (1)
- 11 nC (1)
- 11.2 nC (1)
- 110 nC (1)
- 115 nC (1)
- 14.8 nC (1)
- 16 nC (1)
- 17 nC (1)
- 182 nC (1)
- 20 nC (1)
- 21 nC (1)
- 22 nC (5)
- 23 nC (2)
- 24 nC (1)
- 27 nC (1)
- 3.7 nC (1)
- 31 nC (1)
- 33 nC (1)
- 34 nC (1)
- 35 nC (1)
- 38 nC (1)
- 46 nC (1)
- 49 nC (1)
- 50 nC (1)
- 58 nC (1)
- 59 nC (1)
- 60 nC (1)
- 61 nC (1)
- 7 nC (3)
- 7.5 nC (1)
- 72 nC (2)
- 74 nC (3)
- 9.8 nC (1)
- 91 nC (1)
- 99 nC (1)
- 선택한 필터 :
61 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
6,000
재고
|
Toshiba | MOSFET N-Ch 40V 1570pF 24.4nC 50A 36W | 20 V | SMD/SMT | SOP-Advance-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 72 A | 5.4 mOhms | 1.4 V | 24 nC | Enhancement | ||||
|
|
|
견적을 받아 |
5,000
재고
|
Toshiba | MOSFET N-Ch 60V 4180pF 60nC 160A 132W | 20 V | SMD/SMT | SOP-Advance-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 160 A | 1.9 mOhms | 1.5 V | 60 nC | Enhancement | ||||
|
|
|
견적을 받아 |
4,984
재고
|
Toshiba | MOSFET N-Ch 60V 1440pF 27nC 79A 81W | 20 V | SMD/SMT | SOP-Advance-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 79 A | 5.4 mOhms | 1.5 V | 22 nC | Enhancement | ||||
|
|
|
견적을 받아 |
4,918
재고
|
Toshiba | MOSFET N-Ch 30V 5800pF 81nC 280A 132W | 20 V | SMD/SMT | SOP-Advance-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 280 A | 610 uOhms | 1.1 V | Enhancement | |||||
|
|
|
견적을 받아 |
3,000
재고
|
Toshiba | MOSFET N-Ch 30V 2940pF 50nC 134A 90W | 20 V | SMD/SMT | SOP-Advance-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 134 A | 2.2 mOhms | 1.1 V | 50 nC | Enhancement | ||||
|
|
|
견적을 받아 |
8,688
재고
|
Toshiba | MOSFET 30 Volt N-Channel | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 150 A | 890 mOhms | 1.1 V | 110 nC | Enhancement | |||
|
|
|
견적을 받아 |
2,568
재고
|
Toshiba | MOSFET Power MOSFET N-Channel Single | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 150 A | 2.1 mOhms | 2 V | 72 nC | Enhancement | |||
|
|
|
견적을 받아 |
2,392
재고
|
Toshiba | MOSFET 40 Volt N-Channel | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 175 C | Reel | Si | N-Channel | 40 V | 150 A | 850 uOhms | 1.4 V | 103 nC | Enhancement | ||||
|
|
|
견적을 받아 |
5,046
재고
|
Toshiba | MOSFET N-Ch 60V 42A 48W UMOSVIII 1440pF 22nC | 20 V | SMD/SMT | SOP-Advance-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 42 A | 11.3 mOhms | 2 V to 4 V | 22 nC | Enhancement | |||||
|
|
|
견적을 받아 |
4,096
재고
|
Toshiba | MOSFET POWER MOSFET TRANSISTOR PD=170W | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 45 V | 150 A | 1.7 mOhms | 1.4 V | 99 nC | Enhancement | |||
|
|
|
견적을 받아 |
1,438
재고
|
Toshiba | MOSFET U-MOSVIII-H 60V 130A 72nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 130 A | 1.9 mOhms | 2 V to 4 V | 72 nC | UMOSVIII | |||
|
|
|
견적을 받아 |
1,944
재고
|
Toshiba | MOSFET U-MOSVIII-H 100V 93A 58nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 93 A | 3.7 mOhms | 2 V to 4 V | 58 nC | UMOSVIII | |||
|
|
|
견적을 받아 |
3,181
재고
|
Toshiba | MOSFET X35PBF Power MOSFET Trans VGS10VVDS150V | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 18 A | 28 mOhms | 2 V to 4 V | 10.6 nC | Enhancement | |||
|
|
|
견적을 받아 |
4,090
재고
|
Toshiba | MOSFET U-MOSVIII-H 60V 85A 49nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 85 A | 3.8 mOhms | 2 V to 4 V | 49 nC | Enhancement | |||
|
|
|
견적을 받아 |
4,017
재고
|
Toshiba | MOSFET U-MOSVIII-H 60V 55A 31nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 55 A | 6.1 mOhms | 2 V to 4 V | 31 nC | Enhancement | |||
|
|
|
견적을 받아 |
7,337
재고
|
Toshiba | MOSFET U-MOSVIII-H 60V 40A 23nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 17 mOhms | 2.5 V | 23 nC | Enhancement | |||||
|
|
|
견적을 받아 |
3,238
재고
|
Toshiba | MOSFET U-MOSVIII-H 60V 71A 38nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 71 A | 4.8 mOhms | 2 V to 4 V | 38 nC | Enhancement | |||
|
|
|
견적을 받아 |
2,089
재고
|
Toshiba | MOSFET POWER MOSFET TRANSISTOR PD=132W | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 150 A | 2.1 mOhms | 1.4 V | 74 nC | Enhancement | |||
|
|
|
견적을 받아 |
3,504
재고
|
Toshiba | MOSFET U-MOSVIII-H 30V 68A 6.8nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 68 A | 6.2 mOhms | 2.3 V | 14.8 nC | Enhancement | |||||
|
|
|
견적을 받아 |
4,882
재고
|
Toshiba | MOSFET N-Ch DTMOS VII-H 24W 630pF 38A 30V | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 38 A | 10.2 mOhms | 2.3 V | 9.8 nC | Enhancement | |||
|
|
|
견적을 받아 |
2,329
재고
|
Toshiba | MOSFET U-MOSVIII-H 60V 34A 16nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 34 A | 11 mOhms | 2 V to 4 V | 16 nC | Enhancement | |||
|
|
|
견적을 받아 |
383
재고
|
Toshiba | MOSFET N-Ch 120V 59A 61W UMOSVIII 2180pF 33nC | 20 V | SMD/SMT | SOP-Advance-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 59 A | 7.4 mOhms | 2 V to 4 V | 33 nC | Enhancement | |||||
|
|
|
견적을 받아 |
1,081
재고
|
Toshiba | MOSFET P-CH FET -30V 3.7 mOhm 45W | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 34 A | 3.7 mOhms | 115 nC | Enhancement | |||||
|
|
|
견적을 받아 |
379
재고
|
Toshiba | MOSFET N-Ch 80V 1490pF 22nC 12.3mOhm 44A 48W | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 44 A | 10.1 mOhms | 2 V to 4 V | 22 nC | Enhancement | |||
|
|
|
견적을 받아 |
1,900
재고
|
Toshiba | MOSFET N-Ch DTMOS VII-H 34W 1050pF 57A 30V | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 57 A | 6.8 mOhms | 2.3 V | 17 nC | Enhancement | |||
|
|
|
견적을 받아 |
674
재고
|
Toshiba | MOSFET N-Ch DTMOS VII-H 21W 510pF 32A 30V | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 32 A | 12.6 mOhms | 2.3 V | 7.5 nC | Enhancement | |||
|
|
|
견적을 받아 |
9,600
재고
|
Toshiba | MOSFET 40 Volt N-Channel | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 92 A | 6 mOhms | 1.4 V | 27 nC | Enhancement | |||
|
|
|
전망 | Toshiba | MOSFET X35PBF Power MOSFET Trans VGS4.5VVDS30V | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 60 A | 1.4 mOhms | 1.3 V to 2.3 V | 46 nC | Enhancement | ||||
|
|
|
전망 | Toshiba | MOSFET N-Ch 30V FET 42A 57W 4300pF 61nC | SMD/SMT | SOP-Advance-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 42 A | 3.2 mOhms | 61 nC | |||||||||
|
|
|
전망 | Toshiba | MOSFET U-MOSVIII-H 80V 100A 59nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 3.3 mOhms | 2 V to 4 V | 59 nC | UMOSVIII |
