- Rds On - Drain-Source Resistance :
3 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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전망 | Toshiba | MOSFET UMOSVIII 250V 205m (VGS=10V) SOP-ADV | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 10 A | 168 mOhms | 4 V | 7 nC | Enhancement | |||
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전망 | Toshiba | MOSFET UMOSVIII 200V 131m (VGS=10V) SOP-ADV | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 13 A | 96 mOhms | 4 V | 7 nC | Enhancement | |||
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전망 | Toshiba | MOSFET UMOSVIII 150V 64mOhm (VGS=10V) SOP-ADV | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 18 A | 50 mOhms | 4 V | 7 nC | Enhancement |
